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A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
Published on: August 28, 2018
Spin Crossover Heterostructures for Inducing Strain: Two Contrasting Responses in MoS2 Nanosheets
Junyan Liu1, Łukasz Dobrzycki2, Daniel R Talham1
1Department of Chemistry, University of Florida, Gainesville, Florida 32611, United States.
None:
Spin-crossover (SCO) materials often undergo large, reversible lattice changes associated with the spin-state transitions. Coupling such phase-transition solids with two-dimensional (2D) semiconductors provides a promising route toward dynamically tunable strain engineering. Here, we investigate induced strain in MoS2 nanosheets deposited directly onto SCO single-crystal substrates using variable-temperature Raman and photoluminescence (PL) spectroscopy. Two representative SCO systems with distinct structural motifs are examined: the molecular complex [{Fe(NCSe)(py)}2(μ-bpypz)2] (1), exhibiting a below room temperature spin crossover with ∼4% volume change, and the Hofmann-like framework [Fe(pyrazine){Au(CN)2}2] (2), displaying an above room temperature spin crossover with ∼6% volume change. Despite both substrates undergoing cooperative spin transitions, the MoS2 layers exhibit fundamentally different optoelectronic responses. In the MoS2-1 heterostructure, the spin transition induces efficient and uniform strain transfer, leading to a reversible Raman shift of the E2g1 mode and a hysteretic photoluminescence peak shift that directly reflects bandgap modulation by strain. In contrast, the MoS2-2 heterostructure displays an unconventional response characterized by a pronounced hysteresis in PL intensity with negligible PL peak shift, accompanied by a Raman signature indicative of compressive strain that is opposite to expectations from simple elastic coupling. By comparing these systems with previously reported MoS2-SCO heterostructures, we demonstrate that SCO-induced strain in MoS2 cannot be predicted solely by the magnitude of the substrate volume change. Instead, the crystallographic orientation, surface chemistry, and interfacial conformity collectively determine whether the MoS2 response is governed by uniform lattice strain, bandgap modulation, or morphology-mediated recombination processes. These findings establish SCO single crystals as versatile mechanical phase change materials capable of programming distinct optoelectronic functionalities in 2D materials through rational interface design.
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