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Published on: March 24, 2019
Over-Strain-Relaxation State and Dislocation-Governed Polar Topologies in Ferroelectric Superlattices
Xiao-Dong Lv1,2, Mei-Xiong Zhu1,2, Ru-Jian Jiang1,2
1Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China.
Ferroelectric films grown on compressive substrates unexpectedly achieve a tensile strain state due to misfit dislocations. This novel over-strain-relaxation enables the formation of unique polar vortex arrays and dipole waves in PbTiO3/SrTiO3 superlattices.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Solid State Chemistry
Background:
- Polar topologies in ferroelectric films are typically formed using tensile strain via coherent growth.
- The evolution of polar textures in ferroelectric films grown under compressive strain remains poorly understood.
Purpose of the Study:
- To investigate the evolution of polar textures in ferroelectric films grown on compressive strain substrates.
- To explore novel strain relaxation mechanisms and their impact on ferroelectric properties.
Main Methods:
- Growth of high-quality PbTiO3/SrTiO3 superlattices on NdGaO3 substrates with nominal compressive mismatch.
- Identification of dislocation arrays and analysis of strain states using advanced characterization techniques.
- Investigation of the interplay between thermal mismatch, ferroelectric phase transition, and polar topology formation.
Main Results:
- Misfit dislocations released strain exceeding the nominal mismatch, resulting in a final tensile strain state of approximately 0.7%.
- This over-strain-relaxation was driven by competing thermal mismatch dynamics and the ferroelectric phase transition of PbTiO3.
- Formation of polar vortex arrays was observed, with a tendency to transition to periodic dipole waves influenced by threading dislocations.
Conclusions:
- The study demonstrates a novel method for integrating and regulating ferroelectric topologies on substrates with nominal compressive strain.
- The discovered over-strain-relaxation behavior offers new possibilities for strain manipulation in oxide epitaxial films.
- Future research could focus on applying these findings to practical substrates like silicon for broader applications.
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