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Published on: March 24, 2019
Atomic-Scale Interplay between Antiphase Boundaries and Charged Domain Walls in Epitaxial BiFeO3/KTaO3 Systems
Tong-Tong Shi1,2, Jia-Qi Liu1, Shuang-Jie Chen1
1Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang 110016, China.
Antiphase boundaries (APBs) were created at BiFeO3/KTaO3 interfaces, altering local polarization and forming charged domain walls. This work reveals a method for controlling APBs and manipulating oxide heterostructures.
Area of Science:
- Materials Science
- Solid State Physics
- Surface Science
Background:
- Oxide interfaces exhibit emergent phenomena like superconductivity and magnetoelectric coupling.
- These phenomena are crucial for next-generation functional devices.
- Controlling interfacial properties is key to harnessing these phenomena.
Purpose of the Study:
- To demonstrate the formation of antiphase boundaries (APBs) at BiFeO3/KTaO3 interfaces.
- To investigate the impact of APBs on local polarization and domain wall formation.
- To elucidate the mechanism for creating and stabilizing APBs.
Main Methods:
- Pulsed laser deposition for interface preparation.
- High-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM).
- Atomic-resolution energy-dispersive X-ray spectroscopy (EDS).
Main Results:
- Antiphase boundaries (APBs) were successfully formed at the BiFeO3/KTaO3 interface.
- APBs were characterized with both planar and stepped configurations.
- High-temperature KTaO3 pretreatment induced K+ depletion and Bi3+ diffusion, stabilizing APBs.
- Charged APBs generated a built-in electric field, altering local polarization and inducing charged domain walls.
Conclusions:
- A mechanism for controlled APB formation at oxide interfaces was revealed.
- Interfacial chemistry can be leveraged to manipulate microstructures and polarization.
- Findings offer insights for designing novel oxide heterostructures for functional devices.
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