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Editorial for the Special Issue on SiC Based Miniaturized Devices, 3rd Edition.
Stephen E Saddow1, Brenda L VanMil2, Benoit Hamelin3
1Department of Electrical Engineering, University of South Florida, 4202 East Fowler Avenue, ENB118, Tampa, FL 33620, USA.
Micromachines
|June 26, 2026
Summary
Silicon carbide (SiC) is a key material for advanced power electronics and high-performance computing. Its unique properties enable more efficient and powerful next-generation devices.
Area of Science:
- Materials Science
- Electrical Engineering
- Semiconductor Physics
Background:
- Traditional silicon (Si) power devices face limitations in efficiency and operating conditions.
- The demand for higher power density and faster switching speeds is increasing.
- Wide-bandgap semiconductors offer potential solutions to overcome Si limitations.
