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Simulation Analysis and Characteristic Research of High-Performance SAW Devices with Trapezoidal Piezoelectric

Zhipeng Ma1, Shijun He1, Zhangrui Duan1

  • 1School of Electrical and Electronic Engineering, Chongqing University of Technology, No. 69 Hongguang Avenue, Banan District, Chongqing 400054, China.

Micromachines
|June 26, 2026
PubMed
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This study introduces a novel trapezoidal etching technique for surface acoustic wave (SAW) devices. This method significantly enhances the electromechanical coupling factor (K^2), improving device performance and offering a practical solution for high-performance SAW device fabrication.

Area of Science:

  • Materials Science
  • Electrical Engineering
  • Acoustics

Background:

  • Surface Acoustic Wave (SAW) devices are crucial for various electronic applications.
  • The electromechanical coupling factor (K^2) is a key performance metric for SAW devices.
  • Conventional SAW structures face limitations in K^2 due to spatial mismatch between mechanical energy and electric fields.

Purpose of the Study:

  • To propose and investigate a novel microstructure for SAW devices using trapezoidal etching of the piezoelectric layer.
  • To enhance the electromechanical coupling factor (K^2) by improving spatial overlap between mechanical energy and electric fields.
  • To provide a practically feasible solution for designing and fabricating high-performance SAW devices.

Main Methods:

  • Established an Al/ZnO/Si trapezoidal etching model for simulation studies.
Keywords:
ZnO/Si structureelectromechanical coupling factor (K2)finite-element method (FEM)surface acoustic wave (SAW)trapezoidal etching

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  • Investigated the variation of K^2 by altering the bottom width (S_ZnO) under different etching shapes (trapezoidal, rectangular, inverted trapezoidal).
  • Analyzed the impact of trapezoidal etching on mechanical energy leakage and spatial field overlap.

    • Main Results:

    • Trapezoidal etching was shown to reduce mechanical energy leakage and enhance spatial overlap.
    • K^2 significantly increased with trapezoidal etching, showing a positive correlation with decreasing S_ZnO.
    • A maximum K^2 of 14.34% was achieved at S_ZnO = 0.1 μm, a 19-fold improvement over conventional structures.
    • Figure of Merit (FOM) and insertion loss (S21) were also remarkably improved.

    Conclusions:

    • The proposed trapezoidal etching microstructure offers a significant enhancement in K^2 for SAW devices.
    • The performance benefits were maintained even at practically feasible S_ZnO values (0.2 μm and 0.4 μm).
    • This approach presents a viable method for developing next-generation high-performance SAW devices.