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Spare-Row-Based Fault-Tolerant Dynamic Operation Units for RRAM Computing-in-Memory Systems.

Liang-Ying Su1, Zih-Yu Huang1, Shih-Hsu Huang1

  • 1Department of Electronic Engineering, Chung Yuan Christian University, Taoyuan 320314, Taiwan.

Micromachines
|June 26, 2026
PubMed
Summary
This summary is machine-generated.

This study introduces a novel fault-tolerant scheme for Resistive Random-Access Memory (RRAM) computing-in-memory systems. The new design overcomes limitations of existing methods, improving system yield without relying on spare rows.

Keywords:
crossbar arrayintegrated circuitsmultiply-accumulateredundant memoriesreliability

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Area of Science:

  • Computer Engineering
  • Memory Technology
  • Integrated Circuits

Background:

  • Resistive Random-Access Memory (RRAM) crossbar architectures face limitations in simultaneous word line activation, hindering parallelism in computing-in-memory (CIM) systems.
  • Existing dynamic operation units for CIM lack fault tolerance, leading to yield degradation due to defective memory cells.
  • Previous fault tolerance methods using spare rows are limited by the number of available spares.

Purpose of the Study:

  • To propose a generalized fault-tolerant scheme for RRAM CIM architectures that is independent of spare row limitations.
  • To introduce a novel word line activation generator enabling flexible row remapping.
  • To address the architectural bottleneck and yield degradation issues in RRAM-based CIM.

Main Methods:

  • Development of a generalized fault-tolerant scheme for RRAM crossbar arrays.
  • Introduction of a novel word line activation generator for dynamic row remapping.
  • Implementation and experimental validation of the proposed architecture.

Main Results:

  • The proposed scheme effectively provides fault tolerance in RRAM CIM systems.
  • The architecture demonstrates independence from the number of spare rows for fault tolerance.
  • Minimal area and power overhead were observed with the new design.

Conclusions:

  • The generalized fault-tolerant scheme significantly enhances the reliability and yield of RRAM CIM systems.
  • The novel word line activation generator facilitates flexible and efficient row remapping.
  • This approach offers a scalable solution for fault tolerance in future computing-in-memory applications.