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Related Concept Videos

Cut-off Frequency of BJT01:17

Cut-off Frequency of BJT

Cut-off frequencies in Bipolar Junction Transistors (BJTs) mark the transition between the signal's pass band and stop band, influencing their performance in amplifying or attenuating frequencies. These frequencies are crucial for designing BJTs to meet specific operational requirements in electronic circuits.
Alpha Cut-Off Frequency: Pertinent to the common-base configuration, the alpha cut-off frequency defines the upper-frequency limit at which the current gain, alpha, remains stable. As...
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Design and Characterization Methodology for Efficient Wide Range Tunable MEMS Filters
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A 0.5-67 GHz Wideband Static 1:2 Frequency Divider in an InP DHBT Technology with Core Transistors Scaling

Min Zhang1,2,3, Qiao Meng1, Youtao Zhang2,3

  • 1Institute of RF-&-OE ICs, Southeast University, Nanjing 210096, China.

Micromachines
|June 26, 2026
PubMed
Summary

Researchers developed a wideband static frequency divider using selective transistor scaling in InP DHBT technology. This method enhances high-frequency performance with minimal process changes, achieving a 0.5-67 GHz bandwidth.

Keywords:
current-mode logic (CML)indium phosphide (InP)millimeter-wave MMICstatic frequency dividertransistor scalingwideband

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Area of Science:

  • Electronics
  • Semiconductor Devices
  • Microwave Engineering

Background:

  • Static frequency dividers are crucial components in modern electronic systems.
  • Achieving wide bandwidths at high frequencies presents significant design challenges.
  • Existing InP DHBT (heterojunction bipolar transistor) technologies offer high performance but require optimization for specific applications.

Purpose of the Study:

  • To present a novel selective transistor scaling strategy for wideband static frequency dividers.
  • To improve the high-frequency operation of a 1:2 frequency divider.
  • To demonstrate an effective upgrade path for mature InP DHBT platforms.

Main Methods:

  • Implementation of a 0.5-67 GHz static 1:2 frequency divider using commercial 0.7 μm InGaAs/InP DHBT technology.
  • Adoption of a selective transistor scaling strategy, using 0.5 μm high-fT DHBTs for critical CML (current-mode logic) core pairs and 0.7 μm for non-critical devices.
  • Minimization of parasitic capacitances at speed-limiting nodes.

Main Results:

  • Achieved a continuous operating bandwidth from 0.5 to 67 GHz.
  • Demonstrated a full-band input power range from -5 to +10 dBm.
  • Obtained a single-ended output power > -10 dBm and SSB phase noise of -141.03 dBc/Hz at 100 kHz offset (30 GHz input).

Conclusions:

  • Selective core transistor scaling is an effective and practical method for upgrading wideband static frequency dividers.
  • This approach enhances high-frequency performance with minimal circuit and process overhead.
  • The presented technique offers a viable route for leveraging mature InP DHBT platforms for advanced applications.