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Interface-Engineered, Low-Damage IGZO/HfO2 Charge-Trapping Memory Devices Fabricated Using a Remote Plasma ALD
Inkook Hwang1, Hyeonwu Nam1, Jiwon Kim1
1Department of Advanced Materials Engineering, Tech University of Korea, Siheung-si 15073, Republic of Korea.
Micromachines
|June 26, 2026
Summary
Remote plasma processing and annealing optimize indium gallium zinc oxide (IGZO) charge-trapping memory (CTM) transistors. This approach enhances memory window, reduces leakage, and improves stability for next-generation nonvolatile memory applications.
Area of Science:
- Materials Science
- Electrical Engineering
- Semiconductor Physics
Background:
- Charge-trapping memory (CTM) transistors are crucial for nonvolatile memory.
- Indium gallium zinc oxide (IGZO) and high-k Hafnium dioxide (HfO2) are promising materials for CTM devices.
- Plasma processing and annealing significantly impact thin film quality and device performance.
Purpose of the Study:
- To develop CTM transistors using IGZO and HfO2.
- To investigate the effects of direct plasma (DP) and remote plasma (RP) deposition on HfO2 thin films.
- To optimize post-deposition annealing (PDA) conditions for enhanced interfacial stability and device reliability.
Main Methods:
- Fabrication of CTM transistors with IGZO channels and HfO2 charge-trapping layers.
- Deposition of HfO2 films using atomic layer deposition (ALD) in DP and RP modes.
- Post-deposition annealing of IGZO and HfO2 layers at various temperatures.
Main Results:
- RP-processed devices showed a wider memory window and reduced gate leakage current compared to DP-processed devices.
- RP-processed devices exhibited improved threshold voltage stability.
- Post-deposition annealing effectively reduced interfacial defect density and enhanced crystallinity.
Conclusions:
- Remote plasma processing is superior to direct plasma processing for fabricating high-performance IGZO CTM devices.
- Optimized annealing conditions are critical for enhancing interfacial stability and device reliability.
- The choice of plasma process and annealing parameters significantly influences the electrical characteristics of oxide semiconductor-based CTM devices.
