Ultrahigh-Performance Mix-Structure Ga₂O₃/ZnO Heterostructure Solar Blind UV Detector and Its Wide Applications in...

Practical application of solar-blind UV (220-280 nm) detectors in multiples of fields is key problem in UV optoelectronic technology. Herein, the performance of mix-structure Ga₂O₃/ZnO and mix-structure Ga₂O₃/Ga doped ZnO hetero-structure detectors are firstly optimized, optimized mix-structure Ga₂O₃/ZnO detector possesses high response (3010.2 A/W@235 nm, 40 V), low I_dark (6.97× 10^-11 A @40 V), high I_UV/I_dark ratio (10⁵ at 4.8 µW/cm² 235 nm) simultaneously. The mechanisms of the device under different conditions are explored. Avalanche breakdown mechanism induced fast response and decay speeds (t_r: 0.38 µs: t_d1: 2.47 µs) at pulse UV laser in the device under high voltage, which favored its application in UV communications. Fast response and decay speeds of the device at faint 254 nm light (t_r: 25.95 s: t_d1: 23.05 s), is beneficial for its application in missile alarm, electrical fire alarm, ozone alarm, and so on. Because of high density of Holes are trapped within the device under 1 V bias and faint deep UV condition, the mix-structure Ga₂O₃/ZnO heterostructure detector presented good performance in simulating complicated PPF、LTP behavior of synapses in human brains and ANN. The difference response and recovery mechanism of the Ga₂O₃/ZnO hetero-structure detector under different conditions, is especially meaningful in actual applications of the device in various scenarios.