Dielectric Polarization in a Capacitor
Potential Due to a Polarized Object
You might also read
Articles linked to this work by shared authors, journal, and citation graph.
Updated: Jul 4, 2026

Gradient Echo Quantum Memory in Warm Atomic Vapor
Published on: November 11, 2013
Quanzhen Wan1,2, Shi Zhao1,2, Baoshan Tang1,2
1Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, Singapore.
Researchers developed a novel 2D rhenium disulfide/hafnium zirconium oxide transistor for polarization-sensitive memory. This breakthrough enables advanced optical computing and data storage by utilizing light polarization for information processing.
Area of Science:
Background:
Purpose of the Study:
Main Methods:
Main Results:
Conclusions: