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High-temperature electrical performance and interface adhesion performance of SiC-based Pt thin-film RTDs.

Ziyan Fang^1,2, Xudong Fang^3,4,5,6, Chen Wu^1,2

¹State Key Laboratory for Manufacturing Systems Engineering, International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technologies, Xi'an Jiaotong University, Xi'an, China.

Microsystems & Nanoengineering

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Summary

High-performance platinum thin-film resistance temperature detectors (RTDs) on silicon carbide (SiC) were developed for extreme temperatures. Optimized adhesion and protective layers significantly improved their stability and reliability in harsh environments.

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Area of Science:

Materials Science
Electrical Engineering
Sensor Technology

Background:

High-temperature measurement accuracy is critical for silicon carbide (SiC) pressure sensors.
Developing stable platinum thin-film resistance temperature detectors (RTDs) for operation above 800 °C in air is essential.

Purpose of the Study:

Investigate adhesion layer materials and annealing effects on RTD performance.
Enhance high-temperature stability and interfacial mechanical strength of Pt thin films on SiC.
Suppress Pt film agglomeration using protective layers.

Main Methods:

Evaluated temperature coefficient of resistance (TCR), consistency, electrical stability, and adhesion strength.
Tested Pt thin-film RTDs with tantalum (Ta) and aluminum oxide (Al₂O₃) adhesion layers.
Introduced yttria-stabilized zirconia (YSZ) protective layers to assess stability improvements.

Main Results:

Pt thin-film RTDs with Ta and Al₂O₃ adhesion layers functioned up to ~855 °C with good linearity and high TCR.
Resistance drift rates at 800 °C were reduced by YSZ protective layers (e.g., Ta-based from 0.538%/h to 0.291%/h).
Al₂O₃ adhesion layer improved critical load (Lc₂) after annealing, while Ta adhesion layer's Lc₂ decreased.

Conclusions:

A reliable combination of adhesion and protective layers was identified for SiC-based sensors in extreme environments.
Optimized Pt thin-film RTDs demonstrate enhanced stability and mechanical integrity at high temperatures.
The study provides crucial insights for developing integrated high-temperature SiC sensors.