Bis(Formazanate) Nickel(II) Complex as a Promising Active Material for Resistive Random Access Memory Device: Impact...

Area of Science:

• Coordination Chemistry
• Materials Science
• Nanotechnology

Background:

• Formazan ligands are known for their redox activity and coordination properties.
• Nickel(II) complexes have been explored for various electronic applications.

Purpose of the Study:

• To design, synthesize, and characterize a mononuclear bis(formazanate) Ni(II) complex.
• To investigate the electrochemical properties of the synthesized complex.
• To evaluate the potential of the complex as an active material in resistive switching memory devices.

Main Methods:

• Synthesis of the mononuclear bis(formazanate) Ni(II) complex.
• Structural characterization using single-crystal X-ray diffraction (SCXRD).
• Electrochemical analysis using cyclic voltammetry.
• Fabrication and testing of a resistive switching memory device (Ag/Ni^IIL₂/FTO).

Main Results:

• The Ni(II) complex, [Ni^IIL₂], was successfully synthesized and confirmed to have an octahedral geometry via SCXRD.
• Cyclic voltammetry revealed reversible redox events involving both the ligand and the nickel center.
• The fabricated memory device exhibited excellent resistance switching behavior with a high ON/OFF ratio (10⁴), low switching voltage, and good endurance (450 cycles).

Conclusions:

• The synthesized Ni(II) formazanate complex possesses tunable redox properties.
• The complex shows significant potential as an active material for developing stable and efficient nonvolatile resistive switching memory devices.