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Updated: Jul 9, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Self-powered and gate-reconfigurable photodetection and logic operations in the Ta2PdS6/WSe2 van der Waals
Sooheon Cho1, Jinsu Kang1, Bom Lee1
1School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea. jy.choi@skku.edu.
Abstract:
Self-powered photodetectors that operate without an external bias are highly desirable for next-generation optoelectronic systems, yet simultaneously achieving high responsivity, fast response, and electrical tunability remains challenging. Here, we demonstrate a van der Waals (vdW) heterostructure photodetector based on semiconducting quasi-one-dimensional Ta2PdS6 integrated with p-type WSe2. The device exhibits a strong built-in potential of 521 meV, facilitating carrier separation and collection and a high responsivity of 381.3 mA W-1 under self-powered operation. Electrostatic gating further modulates the interfacial band alignment, enhancing the built-in potential by ∼150 meV and boosting the responsivity more than twofold at -30 V. This gate tunability enables dynamic control of device operation, including reconfiguration between low-power and high-sensitivity imaging modes as well as AND/OR optoelectronic logic functions. Our findings highlight the multifunctional potential of Ta2PdS6/WSe2 heterostructures, providing a versatile platform for adaptive photodetection and integrated optoelectronic computing and pointing toward future opportunities in broadband and reconfigurable device architectures.

