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Atomic-Scale Measurement of Lattice Distortion in Sm-Doped Bismuth-Based Oxides
Junyue Han1,2, Yubo Ma3, Gang Tian4
1School of Chemistry and Chemical Engineering, Liaocheng University, Liaocheng, China.
Small Methods
|July 10, 2026
Summary
Element doping in bismuth oxide thin films creates ordered structures and strain. This atomic-level distortion enhances ferroelectric properties, offering insights for material optimization.
Area of Science:
- Materials Science
- Solid State Physics
- Nanotechnology
Background:
- Element doping is crucial for tuning the properties of layered oxides.
- Understanding atomic-level structural changes is key to optimizing material performance.
Purpose of the Study:
- To investigate the structural and ferroelectric properties of Sm-doped Bi2O3 thin films.
- To explore the relationship between doping-induced strain and ferroelectricity.
Main Methods:
- Atomic-resolution scanning transmission electron microscopy (STEM) with high-angle annular dark-field (HAADF) imaging.
- Atomic-resolution energy-dispersive X-ray spectroscopy (EDS) for elemental analysis.
- Piezoresponse Force Microscopy (PFM) for ferroelectric characterization.
Main Results:
- Samarium (Sm) atoms preferentially occupy specific atomic layers in Bi2O3, forming a long-range ordered structure.
- A periodic built-in strain field and local lattice distortion were observed, increasing towards the film surface.
- The doped films exhibited intrinsic ferroelectric characteristics, including distinct domain switching behavior.
Conclusions:
- Doping-induced local lattice distortion is a significant factor in modulating ferroelectric properties in layered materials.
- Atomic-scale structural insights are provided for optimizing ferroelectric bismuth-based oxides.
- This research highlights a pathway for enhancing ferroelectric performance through controlled doping and strain engineering.
Keywords:
atomic‐scalebismuth‐based oxideselement dopinglocal lattice distortionquantitative lattice analysisMore Related Videos
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