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High Dynamic Range 120 dB Ga2O3-In2Se3 Photodetector Array by Ferroelectric Polarization Enhancement.

Yifei Chen1, Ximo Zhu1, Zhen Wang2

  • 1School of Integrated Circuits, Hubei University, Wuhan, China.

Small (Weinheim an Der Bergstrasse, Germany)
|July 11, 2026
PubMed
Summary

This study introduces a novel gallium oxide-indium selenide photodetector for enhanced solar-blind ultraviolet detection. The ferroelectric-enhanced device shows superior weak-light sensitivity, paving the way for advanced imaging applications.

Keywords:
Gallium oxideferroelectric polarizationlinear dynamic rangephotodetectorsolar‐blind ultraviolet

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Area of Science:

  • Materials Science
  • Optoelectronics
  • Semiconductor Physics

Background:

  • Gallium oxide (Ga2O3) photodetectors excel in solar-blind ultraviolet (SBUV) applications but struggle with weak-light detection.
  • Commercialization of Ga2O3 photodetectors is limited by their poor sensitivity in low-light conditions.

Purpose of the Study:

  • To develop a Ga2O3-based photodetector with improved weak-light detection capabilities.
  • To leverage ferroelectric semiconductor properties for enhanced optoelectronic performance.

Main Methods:

  • Fabrication of a single-crystal van der Waals heterojunction using Ga2O3 and In2Se3.
  • Utilizing the polarization modulation effect of ferroelectric semiconductors.
  • Characterization of photodetector performance under 255 nm illumination.

Main Results:

  • Achieved an on/off ratio of 712,434 and a detectivity of 1.6 × 10^14 Jones.
  • Demonstrated a linear dynamic range (LDR) of 120 dB.
  • Fabricated a 5×5 array with consistent optoelectronic performance across all units.

Conclusions:

  • The Ga2O3-In2Se3 heterojunction photodetector significantly enhances weak-light detection for SBUV applications.
  • The consistent performance of the fabricated array indicates potential for imaging applications.
  • This work offers new strategies for developing ferroelectric-enhanced ultraviolet detectors.