High-Temperature Persistent Luminescence and Anti-Thermal Quenching in LiGa₅O₈ by Trap Engineering

High-temperature luminescent materials are essential for applications in displays, information storage, anti-counterfeiting, and extreme-environment imaging, yet it remains highly challenging to simultaneously realize anti- thermal quenching photoluminescence (anti-TQ PL) and high-temperature persistent luminescence (HT-PersL) under elevated temperatures. In this work, we demonstrate a defect-engineering strategy based on synergistic Cu²⁺ and Zn²⁺ co-doping in LiGa₅O₈, which reconstructs the deep trap hierarchy. The resulting thermally robust deep trap network enables efficient charge-carrier storage and thermally activated release of carriers at high temperatures. Consequently, LiGa₅O₈:Cu²⁺, Zn²⁺ exhibits both significant anti-TQ PL and enhanced HT-PersL, displaying a temperature-dependent chromaticity evolution from blue to red. This study provides an effective strategy for synergistically controlling multicolor anti-TQ PL and HT-PersL in a single material system.