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Ultrathin Sb2S3 solar cells processed by atomic-layer additive manufacturing
Micah Mc Naire1, Sanja Pannen1, Jonas Englhard1
1Department of Chemistry and Pharmacy, Section Materials Chemistry, Chair Chemistry of Thin Film Materials, IZNF, Friedrich-Alexander-Universität Erlangen-Nürnberg, Erlangen, Germany.
Communications Materials
|July 12, 2026
Summary
Atomic-layer additive manufacturing (ALAM) enables 3D printing of semiconductor stacks for inorganic solar cells. This novel approach allows for precise, layer-by-layer fabrication of functional photovoltaic devices.
Area of Science:
- Materials Science
- Nanotechnology
- Renewable Energy
Background:
- Atomic layer deposition (ALD) is a standard technique for ultrathin coatings.
- Direct atomic layer processing (DALP®) utilizes lateral confinement for deposition.
- Atomic-layer additive manufacturing (ALAM) combines ALD chemistry with DALP® for 3D printing.
Purpose of the Study:
- To demonstrate the application of ALAM for fabricating inorganic solar cells.
- To optimize and evaluate ALAM processes for ZnS, Sb2S3, and V2O5.
- To construct functional solar cells using ALAM-printed semiconductor layers.
Main Methods:
- Optimization of ALAM processes for vanadium(V) oxide, zinc sulfide, and antimony(III) sulfide.
- Characterization of layer-by-layer growth, material structure, and surface morphology.
- 3D printing of ZnS / Sb2S3 / V2O5 semiconductor stacks with electrodes and TiO2.
Main Results:
- Established layer-by-layer growth mode with self-limiting surface chemistry.
- Confirmed smooth surface morphology in ALAM-coated areas.
- Successfully fabricated functional inorganic solar cells with a 120 nm Sb2S3 absorber layer.
Conclusions:
- ALAM is applicable for the additive manufacturing of crucial semiconductor stacks for solar cells.
- The direct patterning capability of ALAM offers advantages in prototyping and optimizing photovoltaic devices.
- This work highlights a novel fabrication route for research and development in photovoltaics.
