Machine-learning modeling of temperature-dependent optoelectronic properties of anharmonic solid solutions

Leveraging strong optoelectronic responses to external stimuli, such as temperature and electric fields, is central to the development of advanced photonic technologies, including adaptive photodetectors and reconfigurable photovoltaic devices. However, only a limited number of semiconducting materials, typically characterized by strong electron-phonon coupling, are known to exhibit such pronounced responsiveness, and their equilibrium optoelectronic properties are often not optimally suited for targeted applications. Chemical engineering strategies, such as doping and solid-solution mixing, are therefore widely employed to fine-tune the electronic and optical properties of semiconductors. Predicting the impact of such modifications, however, remains highly challenging due to the intrinsic complexity of chemically disordered and anharmonic systems, as well as the computational limitations of conventional first-principles approaches. In this work, we introduce a new computational framework that combines ab initio electronic-structure methods with machine-learning techniques to achieve first-principles precision in the prediction of the optoelectronic properties of anharmonic solid solutions at finite temperature. We apply this approach to Ag₃SBr_xI_1-x solid solutions, an emergent class of optoelectronic materials that have been experimentally shown to exhibit large band-gap tunability and strong responses to thermal excitations. Our results provide quantitative insight into the interplay between chemical disorder, lattice dynamics, and electronic structure in these materials. More broadly, this study establishes a general strategy for the accurate modeling of optoelectronic functionality in chemically disordered semiconductors.