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P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...

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Updated: Jul 14, 2026

Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films
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Asymmetric Dual-Interface Passivation with Functionalized Ammonium Halides for High-Performance Inverted CsPbI2Br

Xin Liu1, Chengguo Liu1, Wei Li1

  • 1Optoelectronic Sensor Devices and Systems Key Laboratory of Sichuan Provincial Universities, Sichuan Meteorological Optoelectronic Sensor Technology and Application Engineering Research Center, Information Materials and Device Applications Key Laboratory of Sichuan Provincial Universities, College of Optoelectronic Engineering (Chengdu IC Valley Industrial College), Chengdu University of Information Technology, Chengdu 610225, China.

Nanomaterials (Basel, Switzerland)
|July 13, 2026
PubMed
Summary

Researchers developed a dual-interface passivation strategy for perovskite solar cells (PSCs) using specific organic salts. This method enhances both fill factor and open-circuit voltage, leading to a significant increase in power conversion efficiency for inorganic PSCs.

Keywords:
CsPbI2Brammonium halidesasymmetric passivationinterfacial passivationinverted perovskite solar cells

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Area of Science:

  • Materials Science
  • Renewable Energy
  • Photovoltaics

Background:

  • Interfacial defect passivation is crucial for reducing non-radiative recombination losses in inorganic perovskite solar cells (PSCs).
  • Different chemical environments at the top and bottom interfaces require passivation agents with tailored functionalities, which is an underexplored area.
  • Inverted PSCs with a configuration of ITO/NiOx/CsPbI2Br/PCBM/BCP/Ag are investigated.

Purpose of the Study:

  • To systematically investigate the effects of phenylethylammonium iodide (PEAI) and 2-thiophenemethylammonium iodide (ThMI) on the bottom and top interfaces of inverted PSCs.
  • To develop an asymmetric dual-interface passivation strategy by leveraging the complementary selectivity of PEAI and ThMI.
  • To establish a rational design paradigm for interface-specific passivation in inverted inorganic PSCs.

Main Methods:

  • Systematic application of PEAI and ThMI to individually passivate the bottom (NiOx/CsPbI2Br) and top (CsPbI2Br/PCBM) interfaces.
  • Fabrication of inverted PSCs with a specific device architecture (ITO/NiOx/CsPbI2Br/PCBM/BCP/Ag).
  • Construction of an asymmetric dual-interface passivation architecture using PEAI at the bottom and ThMI at the top.

Main Results:

  • Bottom-interface modification with PEAI and ThMI significantly improved the fill factor (FF), with PEAI showing a more pronounced enhancement.
  • Top-interface passivation with ThMI effectively boosted the open-circuit voltage (Voc) by neutralizing undercoordinated Pb2+ defects.
  • The optimized asymmetric PEAI/ThMI device achieved a champion power conversion efficiency (PCE) of 15.44%, with improved Voc, Jsc, and FF compared to the control device.

Conclusions:

  • PEAI and ThMI exhibit complementary selectivity for passivating distinct interfaces in inverted inorganic PSCs.
  • An asymmetric dual-interface passivation strategy synergistically enhances both FF and Voc, leading to higher PCE.
  • This work provides a rational design paradigm for interface engineering in PSCs, emphasizing molecular functionality for targeted defect passivation.