Related Experiment Video
Updated: Jul 15, 2026

Low-energy Cathodoluminescence for (Oxy)Nitride Phosphors
Published on: November 15, 2016
Dopant-driven photonic nonlinear optical responses in Mg4O3 electrides
Sabir Ali Siddique1,2, Rabia Bashir2, Muntaha Abid2
1School of Chemistry and Chemical Engineering, Shandong University Jinan-250100 China bilal.siddique@sdu.edu.cn.
Abstract:
Electrides hold tremendous potential for nonlinear optical (NLO) materials in photonics and laser technologies, yet precise control of their optoelectronic properties remains challenging. Here, we systematically design and characterize pristine Mg4O3 and alkali metal halide - doped electrides MX@Mg4O3 (M = Li, Na, K; X = F, Cl) using density functional theory (DFT) and time-dependent DFT. Dopant integration induces electronic restructuring, HOMO-LUMO gap reduction, and enhanced charge-transfer characteristics with concomitant frontier orbital redistribution. Interaction energies (-35.6 to -75.0 kcal mol-1) indicate robust binding and thermodynamic viability, favoring p2 (located on the side of Mg4O3) over p1 (located on the top cavity of the Mg4O3) geometries; fluoride complexes exhibit the strongest interactions at dopant-host distances of 1.8-2.5 Å. The static first hyperpolarizability of pristine Mg4O3 (β 0 = 9.23 × 103 a.u.) surges more than 3-fold upon doping, peaking at 2.87 × 104 a.u. for KCl@Mg4O3-p1. Dynamic NLO responses, including the electro-optic Pockels effect and second-harmonic generation, are markedly enhanced upon alkali-halide doping, with NaF@Mg4O3-p1 showing the highest EOPE response of 50063 a.u. at 1064 nm and NaCl@Mg4O3-p1 exhibiting the strongest SHG response of 1,201,472 a.u. at 1340 nm. UV-vis spectra confirm red-shifted absorptions (λ max = 418-743 nm) tied to π-delocalization and intramolecular charge transfer, aligning with β HRS and refractive index profiles. Collectively, these results demonstrate dopant chemistry and positional engineering as transformative strategies for NLO tuning, positioning Mg4O3 electrides as front runners for next-generation optoelectronic applications.

