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Multidirectional Spin-Orbit Torque Magnetization Dynamics in beyond Room Temperature Van der Waals Magnet Devices
Bing Zhao1, Lakhan Bainsla1,2, Soheil Ershadrad3,4
1Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296Göteborg, Sweden.
Nano Letters
|July 14, 2026
Summary
Room-temperature van der Waals (vdW) magnets like CFGT enable energy-efficient spintronics. This study reveals efficient multidirectional torques in CFGT/Pt heterostructures, paving the way for advanced memory technologies.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Spintronics
Background:
- Room-temperature van der Waals (vdW) magnets are crucial for energy-efficient spintronic devices.
- Understanding magnetization dynamics in these materials is vital for high-speed memory applications.
- Exploration of spin-orbit torque phenomena in vdW magnets is limited.
Purpose of the Study:
- Investigate spin-orbit torque phenomena in the (Co0.15Fe0.85)5GeTe2 (CFGT)/Pt heterostructure.
- Characterize the in-plane and out-of-plane spin Hall conductivity.
- Elucidate the origin of unconventional damping-like torques.
Main Methods:
- Spin-torque ferromagnetic resonance (ST-FMR).
- Second-harmonic Hall measurements.
- Density functional theory (DFT) and Monte Carlo simulations.
Main Results:
- Identified a conventional in-plane spin Hall conductivity of 3.68 × 10^5 (ℏ/2e) (Ω m)^-1.
- Discovered a significant out-of-plane spin Hall conductivity of -0.33 × 10^5 (ℏ/2e) (Ω m)^-1.
- Attributed unconventional torques to interface-induced spin reorientation and enhanced Dzyaloshinskii-Moriya interaction.
Conclusions:
- vdW magnets exhibit efficient multidirectional torques, crucial for spintronic applications.
- The CFGT/Pt heterostructure shows potential for next-generation spintronic devices.
- Low effective magnetization and moderate damping enhance torque efficiency.
Keywords:
2D materialsST-FMRmagnetization dynamicsroom temperaturesecond harmonic Hallspin−orbit torque (SOT)vdW magnetsMore Related Videos
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