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Pushing Colloidal Limits: ∼200 nm InAs Colloidal Quantum Nanorods for Extended Shortwave Infrared Photodetection
Kseniia Kosolapova1, Tariq Sheikh1, Wasim J Mir1
1Center for Renewable Energy and Storage Technologies (CREST), Division of Physical Sciences and Engineering (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal23955-6900, Kingdom of Saudi Arabia.
ACS Nano
|July 17, 2026
Summary
Ultralong indium arsenide (InAs) nanorods offer enhanced stability and extended shortwave infrared absorption for optoelectronics. These nanorods improve charge transport, enabling next-generation devices.
Area of Science:
- Materials Science
- Nanotechnology
- Optoelectronics
Background:
- Indium arsenide colloidal quantum dots (CQDs) are key for shortwave infrared (SWIR) optoelectronics.
- Larger CQD sizes enhance SWIR bandgaps but often reduce colloidal stability and charge transport.
- Achieving extended SWIR (eSWIR) performance requires overcoming these limitations.
Purpose of the Study:
- To synthesize ultralong InAs colloidal quantum nanorods (CQNRs) with improved colloidal stability.
- To enable extended SWIR absorption up to 2000 nm.
- To enhance charge transport for high-performance optoelectronic devices.
Main Methods:
- Controlled synthesis of InAs CQNRs using lithium bis(trimethylsilyl)amide to promote elongation up to ~200 nm.
- Fabrication of photodiodes using the synthesized CQNRs.
- Characterization using four-dimensional scanning transmission electron microscopy and lateral transport measurements.
Main Results:
- Successfully synthesized ultralong InAs CQNRs with excellent colloidal stability.
- Achieved absorption up to 2000 nm in the eSWIR region.
- Fabricated photodiodes demonstrated low dark current (6 μA cm-2) and high external quantum efficiency (10.6%) due to enhanced charge transport.
Conclusions:
- Ultralong InAs CQNRs provide a pathway to overcome the trade-off between size, stability, and charge transport.
- These CQNRs are suitable for next-generation, high-performance, environmentally compliant eSWIR optoelectronic devices.
- The findings pave the way for advanced SWIR imaging and sensing applications.
