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Published on: December 22, 2015
A beam-direction cross-vessel metrology method and error analysis for the ptychography setup at HEPS ID09
Ruiying Liao1, Zina Ou1, Haihan Yu1,2
1Multidisciplinary Research Center, Institute of High Energy Physics of the Chinese Academy of Sciences, Beijing, People's Republic of China.
Journal of Synchrotron Radiation
|July 17, 2026
Summary
A new metrology method using an Invar interferometer frame enhances position monitoring for the High Energy Photon Source (HEPS) ptychography setup. This achieves sub-2 nm RMS positional stability, enabling high-resolution imaging.
Area of Science:
- X-ray science
- Metrology
- Nanotechnology
Background:
- Ptychography is a powerful imaging technique requiring precise sample positioning.
- Existing metrology methods may not meet the stringent stability requirements for advanced synchrotron facilities like the High Energy Photon Source (HEPS).
Purpose of the Study:
- To propose and validate a novel metrology method for precise position monitoring and correction in the HEPS beamline ID09 ptychography setup.
- To demonstrate the effectiveness of an Invar interferometer frame for achieving high positional stability.
Main Methods:
- Development of a compact Invar interferometer metrology frame designed for the space constraints of the HEPS beamline.
- Detailed description of the measurement methodology and rigorous error analysis.
- Implementation and testing of the metrology system within the ptychography setup.
Main Results:
- The developed metrology system achieved exceptional positional stability of less than 2 nm RMS over a frequency range of 1 Hz to 500 Hz.
- Successful demonstration of the metrology strategy through 2D ptychography reconstruction with a resolution of 12.3 nm at 12.4 keV.
Conclusions:
- The proposed Invar interferometer metrology method is effective for high-precision position monitoring and correction in synchrotron-based ptychography.
- The achieved stability and resolution confirm the viability of this strategy for advanced imaging applications at HEPS.
