High-performance multijunction perovskite LEDs with reduced interconnection loss
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Updated: Aug 6, 2026

Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films
Published on: September 8, 2017
Feiyun Zhao1,2, Haifeng Zhao1,3, Zhennan Tian4
1Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, China.
Abstract:
Tandem light-emitting diodes (LEDs) offer advantages in efficiency, brightness and lower the current density for a target brightness, but their implementation in solution-processed perovskite LEDs is limited by interconnection strategies that introduce high voltage penalties and poor robustness. Here we demonstrate a hierarchically structured interconnection layer (ICL) integrating a near-degenerate charge-generation junction with a crystalline-amorphous oxide composite, enabling low-barrier transport and solvent-tolerant stacking with reduced loss. Using this ICL, we realize double-junction perovskite LEDs in which two subunits operate efficiently in series, achieving a peak external quantum efficiency (EQE) of 42.6%, a maximum radiance of 690 W sr-1 m-2, and low driving voltage. The ICL is compatible with multiple perovskite emitters and supports scalable multijunction integration, yielding multijunction devices with sub-bandgap turn-on voltages and high EQEs exceeding 60%. Our results establish a low-loss interconnection strategy for series-stacked perovskite emitters, providing a practical route toward high-brightness and multi-wavelength perovskite light sources.
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