Ultralow-Dispersion Silicon THz Photonic Crystal Interconnects for Multichannel Datalinks

Area of Science:

• Photonics and Optical Communications
• Materials Science
• Integrated Circuits

Background:

• Terahertz (THz) interconnects are crucial for next-generation on-chip communication.
• Current THz interconnects face limitations in data rates and understanding dispersion effects.
• All-silicon (Si) platforms offer potential for broadband photonic integration.

Purpose of the Study:

• To demonstrate high aggregate data rates using all-Si THz photonic crystal waveguides.
• To investigate and elucidate the role of group velocity dispersion (GVD) in on-chip THz data links.
• To establish a new benchmark for THz waveguide interconnect performance.

Main Methods:

• Fabrication of an on-chip all-Si broadband low-dispersion THz photonic crystal waveguide.
• Transmission of complex-modulated data across multiple channels.
• Measurement of data rates and group velocity dispersion (GVD).

Main Results:

• Achieved aggregate data rates exceeding 400 Gbps, with seven channels delivering 452 Gbps.
• Demonstrated low GVD of 2.9 ps² mm⁻¹ within the THz waveguide.
• Attained a record aggregate figure of merit (FoM) of 9.81 Tbps for THz waveguide interconnects.

Conclusions:

• All-Si THz photonic crystal waveguides can achieve high data rates essential for advanced on-chip communication.
• Minimizing GVD is critical for enhancing data transmission in THz interconnects.
• These waveguides represent a promising solution for centimeter-scale on-chip interconnects, potentially augmenting data center infrastructure.