Ultralow-Dispersion Silicon THz Photonic Crystal Interconnects for Multichannel Datalinks

All-Silicon (Si) Terahertz (THz) interconnects are a key platform for next-generation on-chip communication, leveraging broadband photonics to connect reconfigurable electronics. Yet their potential remains largely unrealized, due to low reported data rates and a lack of systematic insight into the role of dispersion in on-chip THz data links. We address these challenges by demonstrating aggregate data rates exceeding 400 Gbps through an on-chip all-Si broadband low-dispersion THz photonic crystal waveguide-interconnect. Seven data channels deliver 452 Gbps of complex-modulated data, aided by the waveguide's low dispersion with group velocity dispersion (GVD) reaching as low as 2.9 ps² mm^-1. Our THz waveguide interconnect delivers a record 9.81 Tbps aggregate figure of merit (FoM), outperforming prior THz waveguide data transfer reports. Our demonstration of high data rates, elucidating the role of GVD for on-chip THz data interconnects, and superior FoMs pave the way for all-Si THz photonic crystal waveguides as centimeter-scale on-chip interconnects for augmenting data center infrastructure.