Ultrawide Charge-Trap Memory Window and Photoinduced Synaptic Behavior in p-Channel Amorphous Oxide Semiconductors

The decades-long absence of high-performance p-type amorphous oxide semiconductors (AOSs) remains a critical bottleneck in complementary circuit development and has severely limited exploration of charge trapping phenomena essential for neuromorphic computing. Here, we achieve a transformative breakthrough by demonstrating a p-channel amorphous oxide semiconductor through ultraviolet-ozone oxidation of crystalline tellurium to amorphous tellurium trioxide (a-TeO₃). This revolutionary material integrates transistor, nonvolatile memory, photodetection, and synaptic functions in a single device, achieving an unprecedented level of functional integration. The a-TeO₃ channel exhibits an unprecedented ultrawide memory window exceeding 58 V under ambient conditions, driven by oxygen vacancy-adsorbate interactions that enable robust multilevel switching. Ultraviolet illumination induces persistent photocurrent through carrier trapping/detrapping, enabling light-programmable synaptic plasticity and associative learning. Paired with monolayer molybdenum disulfide n-mode charge-trap memory (CTM), antagonistic charge-trap dynamics realize autonomous heating/cooling control and precise homeostasis. Hardware-constrained networks built on these complementary synaptic transistors achieve MNIST accuracy comparable to ideal digital systems. This light-reconfigurable p-n platform overcomes a critical materials barrier, unlocking scalable, energy-efficient neuromorphic architectures for edge artificial intelligence.