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Updated: Aug 5, 2026
Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications
Published on: April 21, 2016
Deferoxamine-B-Functionalized Silicon Nanowire Field-Effect Transistor Interfaces for Ultralow-Concentration Fe3+
Bharath Kumar Yadlapalli1,2, Tzu-Chen Huang1, Yu-Hsiang Lee1,2
1Department of Chemical and Materials Engineering, National Central University, Zhongli 32001, Taiwan.
A novel silicon nanowire field-effect transistor (SiNW-FET) sensor functionalized with deferoxamine-B (DFO-B) enables ultrasensitive, label-free detection of iron(III) ions (Fe3+) in semiconductor chemicals. This portable sensor offers rapid on-site screening, complementing traditional methods for critical purity control.
Area of Science:
- Materials Science and Engineering
- Analytical Chemistry
- Nanoscience and Nanotechnology
Background:
- Ultralow metal-ion purity is critical in semiconductor fabrication to prevent defects like dielectric breakdown and yield loss.
- Traditional methods like ICP-MS are sensitive but costly, time-consuming, and unsuitable for rapid on-site screening.
- Trace iron(III) ion (Fe3+) contamination poses significant risks to semiconductor manufacturing processes.
Purpose of the Study:
- To develop an ultrasensitive, label-free sensor for Fe3+ detection in semiconductor-grade chemicals.
- To engineer a deferoxamine-B (DFO-B)-functionalized silicon nanowire field-effect transistor (SiNW-FET) for rapid on-site screening.
- To establish a portable and potentially in situ-compatible platform for contamination assessment.
Main Methods:
- Functionalization of silicon nanowires with deferoxamine-B (DFO-B) via self-assembled monolayers and aldehyde-amine coupling.
- Fabrication of a silicon nanowire field-effect transistor (SiNW-FET) sensor.
- Electrochemical characterization and performance evaluation in aqueous standards and complex chemical matrices.
Main Results:
- The DFO-B-functionalized SiNW-FET demonstrated a linear response to Fe3+ from 10-15 to 10-11 M with a low limit of detection (LOD) of 10-15 M.
- The sensor exhibited an above-Nernst sensitivity of -24 mV dec-1 and maintained reliable Fe3+ detection in complex matrices.
- The developed sensor showed preferential Fe3+ response and operational stability in various chemical environments.
Conclusions:
- The DFO-B-functionalized SiNW-FET offers a rapid, portable, and sensitive on-site screening method for Fe3+ contamination in semiconductor chemicals.
- This technology can complement ICP-MS, providing a valuable tool for contamination assessment and process control.
- The modular sensing interface design allows for potential extension to detect other transition metals.
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