Mechanisms of Film-Formation-Related Defects in EUV Photoresists for Sub-3 nm Nodes and Synergistic...

Area of Science:

• Semiconductor Manufacturing
• Lithography Technology
• Materials Science

Background:

• The semiconductor industry is advancing to sub-3 nm technology nodes, driven by High-NA EUV lithography and novel transistor architectures (GAA, CFET).
• At these advanced nodes, photon shot noise intensifies, and process tolerance windows shrink, exacerbating photoresist film-formation defects.
• These defects arise from multiple fabrication stages and are influenced by stochastic effects, with isolated optimization proving insufficient.

Purpose of the Study:

• To systematically review photoresist film-formation defect mechanisms and their evolution in advanced lithography.
• To propose an integrated co-optimization framework encompassing materials, processes, and intelligence.
• To provide insights for academic research and industrial implementation in defect control.

Main Methods:

• Systematic examination of defect formation and cross-process evolution.
• Development of a conceptual framework for materials-process-intelligence co-optimization.
• Analysis of coupling mechanisms and closed-loop control strategies.

Main Results:

• Identified limitations of isolated optimization approaches for advanced lithography defects.
• Proposed a novel framework integrating materials, processes, and intelligence for defect control.
• Highlighted the importance of understanding cross-process defect evolution.

Conclusions:

• An integrated co-optimization framework is crucial for addressing complex photoresist defects in sub-3 nm patterning.
• Future directions involve closing the control loop across the entire fabrication chain.
• This approach supports low defectivity, high robustness, and improved manufacturability for next-generation semiconductors.