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Developing High Performance GaP/Si Heterojunction Solar Cells
Published on: November 16, 2018
Interface Contact Optimization via Phosphomolybdic Acid Enables 24.9% Efficiency in MoOX-Based Silicon Solar Cells
Shaopeng Chen1, Qian Kang2, Xiqi Yang3
1School of Information Science and Technology, Key Laboratory Optoelectronics Technology Ministry of Education, Beijing University of Technology, Beijing, 100124, People's Republic of China.
Nano-Micro Letters
|July 31, 2026
Summary
Phosphomolybdic acid (PMA) enhances molybdenum oxide (MoOX) hole transport layers in silicon solar cells. This boosts efficiency by improving passivation and charge transport, achieving a record 24.9% cell performance.
Area of Science:
- Materials Science
- Photovoltaics
- Semiconductor Physics
Background:
- Cost-effective carrier-selective passivating contacts are crucial for silicon compound solar cell commercialization.
- Molybdenum oxide (MoOX) is a promising, low-cost hole transport layer (HTL) due to its high work function.
- Limitations in MoOX-based contacts include defect-induced work function reduction and poor charge transport at the hydrogenated amorphous silicon (i-a-Si:H)/MoOX interface.
Purpose of the Study:
- To overcome the limitations of MoOX HTLs in silicon photovoltaics.
- To improve the performance of MoOX-based p-type contacts by addressing interfacial issues.
- To achieve higher efficiencies in silicon solar cells utilizing MoOX.
Main Methods:
- Introduction of an ultrathin phosphomolybdic acid (PMA) interlayer at the i-a-Si:H/MoOX interface.
- Passivation of oxygen vacancy defects within the MoOX layer.
- Modification of interfacial bonding and electronic properties.
Main Results:
- PMA passivated oxygen vacancy defects, increasing open-circuit voltage from 713 to 730 mV.
- A work function elevation of 0.11 eV was achieved via dipole formation.
- Interfacial bonding energy was strengthened, reducing saturation current density by 63% and contact resistance by 24%.
- Fill factor improved from 83.7% to 84.9%.
- A record efficiency of 24.9% was demonstrated for MoOX-based silicon solar cells.
Conclusions:
- The PMA interlayer effectively addresses critical interfacial limitations in MoOX HTLs.
- This approach significantly enhances the performance of silicon solar cells.
- The findings offer valuable insights for developing high-performance MoOX HTL devices for dopant-free p-type contacts.
