Related Experiment Video
Updated: Aug 12, 2026

Harvesting Solar Energy by Means of Charge-Separating Nanocrystals and Their Solids
Published on: August 23, 2012
Mo Ion Intercalation-Driven Exfoliation of Bismuth Selenide Into Nanosheets Enriched With Molybdenum Selenide Enables
Shuting Wang1, Xueru Wang2, Yunjie Hou3
1School of Science, Xi'an University of Posts and Telecommunications, Xi'an, People's Republic of China.
Abstract:
As a representative topological insulator, Bi2Se3 adopts a trigonal structure and demonstrates attractive energy storage properties in aqueous zinc-ion batteries (AZIBs) due to the creation of Dirac surface states. However, the strong van der Waals forces and absence of dangling bonds between layers cause the thermodynamically stable bulk to retain stacked structures with limited active surfaces and interfaces, resulting in a high energy barrier and poor energy storage dynamics. Herein, pre-intercalated molybdenum ions induce the in situ formation of MoSe2 nanodots, which serve as interlamellar pillars to exfoliate bulk Bi2Se3 into ∼4 nm flakes. This process simultaneously increases the surface-to-bulk ratio and regulates the electronic structure of Bi2Se3, thereby boosting its zinc storage performance. The material's reaction mechanism as the cathode for AZIBs and its phase and structural evolutions during the charging-discharging process are clarified via a combined ex- and in situ analysis. The impacts of MoSe2 on the structure, electronic state, charge transfer, ion adsorption behavior, and diffusion barrier of Bi2Se3 are studied by an integrated experimental investigation and theoretical calculation. This work develops an intercalation-exfoliation strategy to thin the layered topological insulator while integrating heterointerface construction, demonstrating the feasibility of synthesizing thin-layer Bi2Se3-based materials for high-performance cathodes in energy storage.
More Related Videos
08:50Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
Published on: November 28, 2017
14:16Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
Published on: October 23, 2018