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Updated: Aug 14, 2026
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Published on: March 6, 2020
Buffer-Layer Cation Substitution Engineering for Lattice Strain Relief-Induced Carrier Dynamics Modulation in
Rong Rong1, Jiayu Xiao2, Ziqin Zhu2
1School of Materials Science and Engineering, Changzhou University, Changzhou, China.
Small (Weinheim an Der Bergstrasse, Germany)
|August 13, 2026
Summary
Cobalt doping in cadmium sulfide buffer layers reduces strain in antimony selenide solar cells. This improves film quality and boosts power conversion efficiency by 16.4%.
Area of Science:
- Materials Science
- Photovoltaics
- Semiconductor Physics
Background:
- Antimony selenide (Sb2Se3) solar cells show promise due to optoelectronic properties.
- Efficiency is limited by non-radiative recombination, with strain effects overlooked.
Purpose of the Study:
- Investigate strain regulation in Sb2Se3 solar cells.
- Enhance device performance through heterojunction engineering.
Main Methods:
- Co2+-doped CdS buffer layers to tailor lattice parameters and induce strain.
- Characterization of film growth, defect formation, and interfacial properties.
- Density functional theory (DFT) calculations and experimental validation.
Main Results:
- Co2+ incorporation contracts CdS lattice, reducing Sb2Se3 interface mismatch and promoting strain relaxation.
- Improved Sb2Se3 film quality, preferred orientation, and suppressed defects.
- Enhanced interfacial electronic coupling and charge transfer, leading to a 16.4% efficiency increase.
Conclusions:
- Heterojunction engineering with Co2+-doped CdS is effective for strain management in Sb2Se3 solar cells.
- Strain relaxation and defect suppression synergistically boost device performance.
- Optimized devices achieved a 9.44% power conversion efficiency.
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