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Updated: Aug 18, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
Published on: December 5, 2015
Intercalation-induced ohmic contact and exceptionally low contact resistance in blue phosphorene heterojunctions
Tianrui Qi1, Jiexin Wang1, Xinyao Yuan1
1Key Laboratory for Photonic and Electronic Bandgap Materials of Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin, 150025, China. redlxj@126.com.
Abstract:
The achievement of low-resistance ohmic contacts in 2D semiconductors is hindered by Fermi-level pinning. Here, we propose an alkali-metal (Li and Na) intercalation strategy to suppress contact barriers in blue phosphorene heterojunctions. Substantial charge transfer (0.60e from Li and 0.44e from Na) induces a semiconductor-to-metal transition, forming high-quality n-type ohmic contacts. The contact resistances of four device configurations approach the quantum limit (∼15.9 Ω µm), with the lowest value of 16.3 Ω µm achieved for the Na-intercalated device along the armchair direction, outperforming most reported 2D semiconductor contacts. This intercalation strategy provides a promising route towards barrier-free, ultra-low-resistance contacts in 2D transistors.
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