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Molecular Engineering of Ionization-Responsive Self-Assembled Hole-Transport Materials for High-Performance Inverted

Yogesh S Tingare1, Chaochin Su1, Xin-Yi Chen2

  • 1Institute of Organic and Polymeric Materials, National Taipei University of Technology, Taipei106344, Taiwan.

Organic Letters
|August 22, 2026
PubMed
Abstract

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A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...