High-κ Mn₃O₄ interfacial engineering enables mobility enhancement in MoS₂ transistors

Molybdenum disulfide (MoS₂) field-effect transistors (FETs) are core candidates for post-Moore era electronic devices. However, interface defect-induced Coulomb scattering and hysteresis effects have long hindered the improvement of performance and stability. Here, we propose a dual-interface engineering strategy using a chemical vapor deposition (CVD)-grown Mn₃O₄ high-κ dielectric, constructing SiO₂/MoS₂/Mn₃O₄ devices to achieve synergistic regulation and investigation of interface scattering mechanisms and trap dynamics. We suggest the Mn₃O₄ dielectric interface hosts two distinct trap states: an extremely shallow one (0.068 eV) and a deep one (0.247 eV). The parallel-plate capacitors yield an effective out-of-plane dielectric constant of κ_eff ≈ 39, and the gate-leakage-current density remains predominantly 10^-6-10^-5 A cm^-2 over ±10 V. The integration of Mn₃O₄ modifies the dielectric and trapping environments of the MoS₂ channel and increases the apparent two-terminal field-effect mobility of the dual-interface device to approximately 30 cm² V^-1 s^-1 at room temperature (RT). These transport changes are consistent with modified dielectric screening and trap dynamics rather than a unique microscopic scattering mechanism, while different trap-response time scales enable reversible hysteresis and hysteresis crossover. Overall, CVD-grown single-crystalline Mn₃O₄ provides a suitable platform for investigating dielectric-environment and dual-interface effects in MoS₂ transistors.