Related Experiment Video
Updated: Aug 28, 2026

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
Published on: October 23, 2018
Low-Threshold Optical Bistability in Detuned DBR Heterostructures Integrated with Dirac Semimetals
Yuexiang Wu1, Jiashun Hu2, Weiqiang Wu1
1School of Integrated Circuits, Shenzhen Polytechnic University, Shenzhen 518055, China.
Abstract:
Optical bistability plays a vital role in high-performance all-optical devices. In this work, we construct a heterostructure consisting of distributed Bragg reflectors (DBRs) and three-dimensional Dirac semimetal (3D DSM), where a 3D DSM layer is sandwiched between two DBRs with mismatched central resonant wavelengths to realize effective excitation and coupling of optical Tamm states (OTSs). Benefiting from the strong optical field confinement and intrinsic Kerr nonlinearity of 3D DSM, the proposed structure achieves a low bistability threshold of 105 V/m. Moreover, the bistability performance can be tuned by modifying the Fermi level of 3D DSM and adjusting the incident angle. The proposed structure offers a promising theoretical platform for the future development of low-power terahertz bistable devices.
Related Concept Videos
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Fermi Level Dynamics
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
Schottky Barrier Diode
Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...

