Related Experiment Video
Updated: Sep 3, 2026

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
Published on: August 2, 2019
Switching charge transfer direction in heterojunctions: A competition of two driving forces
Xing-Peng Wei1, Yuan Meng1, Yu-Ting Yang1
1School of Urban Planning and Design, Peking University Shenzhen Graduate School, Shenzhen 518055, China.
Abstract:
The charge transfer pathway and corresponding heterojunction type rely on the combined effects of the material's inherent properties and the interface structure. Herein, we report a crystal facet-dependent switching of charge transfer direction in TiO2/Ni3S4 composites via the competition of two driving forces (work function difference and interfacial bonding). Experimental and theoretical calculations demonstrate that when the dominant contact facet of Ni3S4 transitions from (022) to (113), the density of interfacial Ti-S bonds significantly increases. These Ti-S bonds, polarized by the electronegativity difference between S (2.58) and Ti (1.54), generate a driving force competing with the work function driving force. This competition can determine the charge transfer direction and the heterojunction type, leading to distinct active species generation: TiO2/Ni3S4-3 (S-scheme) produce •O2-, •OH, and •SO4-, while TiO2/Ni3S4-7 (type-II) generates only •OH and •SO4-, and ultimately resulting in different degradation pathways with ofloxacin as the model pollutant. This work highlights the important role of interfacial bonding in determining charge transfer direction, and introduces a "driving force competition" concept for regulating heterojunction types.
Related Concept Videos
Semiconductors
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
P-N junction
Switching of BJT
Cut-off Mode ("Off" State): In this state, both the emitter-base and collector-base junctions are reverse-biased. The...

