Related Experiment Video
Updated: Sep 5, 2026

Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films
Published on: September 8, 2017
Non-Negligible Intrinsic Nonradiative Recombination in Ideal Wide-Bandgap Mixed-Halide Perovskites
1Anhui Provincial Key Laboratory of Green Carbon Chemistry, School of Chemistry and Materials Engineering, Fuyang Normal University, Fuyang236037, China.
Abstract:
Wide-bandgap mixed-halide perovskites are promising top subcell absorbers for tandem photovoltaics, yet they suffer from severe open-circuit voltage losses. The prevailing view attributes these losses to nonradiative recombination caused by halide phase segregation, and research efforts have thus far focused primarily on improving halide homogeneity. Here, through rigorous first-principles calculations, we reveal that substantial nonradiative recombination persists even in an ideal, phase-segregation-free wide-bandgap perovskite CsPbI1.5Br1.5. This recombination is dominated by iodine interstitial defects, which exhibit a nonradiative capture coefficient on the order of 10-9 cm3 s-1. This finding explains why persistent open-circuit voltage losses remain prevalent in wide-bandgap perovskites even when halide segregation is effectively suppressed. This study highlights the critical need to move beyond halide segregation engineering and to develop targeted passivation strategies for iodine interstitial defects, providing a clear pathway to unlock the full potential of wide-bandgap perovskite solar cells.
Related Concept Videos
Types of Semiconductors
Carrier Generation and Recombination
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
P-N junction
Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...

