Related Experiment Video
Updated: Sep 10, 2026

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
Published on: October 23, 2018
Substrate control of the electronic phase of low-buckled plumbene
Niccolo Simoni1, Daniel Hashemi1
1Department of Physics, Optical Engineering and Nanoengineering, Rose-Hulman Institute of Technology Terre Haute Indiana 47803 USA hashemi@rose-hulman.edu.
Abstract:
Low-buckled plumbene, the heaviest group-14 honeycomb monolayer with the strongest spin-orbit coupling of the family, is nevertheless a normal insulator rather than a quantum spin Hall insulator. Using first-principles calculations with a van der Waals density functional and spin-orbit coupling, we ask what a substrate does to it. On hexagonal boron nitride, whose bands stay far from the Fermi level, plumbene remains a 0.34 eV insulator. An adaptively converged first-principles Wilson loop gives Z 2 = 0 for this non-centrosymmetric interface, under the same occupied-subspace protocol that reproduces nontrivial stanene and trivial free plumbene. On graphene, independent full-SOC relaxations of the hollow, top, and bridge registries all give semimetallic indirect overlaps of 0.073-0.076 eV; hollow is lower by at least 3.03 meV per cell in every cutoff and k-mesh check. Stanene acts structurally, through the buckling its strong binding forces on the sheet, and produces a robust metal within the coherent 1 × 1 models tested: the metallisation persists however the lattice mismatch is partitioned, including with plumbene unstrained, and imposing that buckling on the free sheet closes its gap on its own. Fu-Kane parity analysis, validated against stanene as a known quantum spin Hall insulator, finds free plumbene trivial at every gapped strain; compression metallises it between -3.7% and -3.9% without inverting the bands. Thus these nonmagnetic supports select ordinary-insulating, semimetallic, or metallic phases through distinct electronic and structural mechanisms, but none induces a supported quantum spin Hall phase in the commensurate models tested.
More Related Videos
06:25Step-by-Step Guide for Harnessing Organic Light Emitting Diodes by Solution Processed Device Fabrication of a TADF Emitter
Published on: November 7, 2025
08:12Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films
Published on: September 8, 2017
Related Concept Videos
Electrophilic Addition of HX to 1,3-Butadiene: Thermodynamic vs Kinetic Control
The Z-Scheme of Electron Transport in Photosynthesis
Photochemical Electrocyclic Reactions: Stereochemistry
Selection Rules: Photochemical Activation
Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
Thermal and Photochemical Electrocyclic Reactions: Overview
Radical Substitution: Hydrogenolysis of Alkyl Halides with Tributyltin Hydride
The bonds formed in this reaction are stronger than the bonds broken, making it energetically favorable. The reaction follows a radical chain mechanism similar to radical halogenation reactions,...