Related Experiment Video
Updated: Sep 11, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
Quantum-Material Josephson Junctions: Unconventional Barriers, Emerging Functionality
Kathryn A Pitton1,2, Michiel P Dubbelman1,2, Trent M Kyrk1,2
1Department of Quantum Nanoscience, Faculty of Applied Sciences, Delft University of Technology, Lorentzweg 1, 2628 CJDelft, The Netherlands.
Abstract:
Josephson junctions translate quantum phase coherence into an electrical response and underpin superconducting sensors and quantum circuits. In conventional junctions, the barrier acts primarily as a passive weak link; however, when the barrier is a quantum material with its own internal degrees of freedom like magnetism, strong correlations, or switchable polarization, the Josephson effect becomes a sensitive probe of symmetry and many-body physics in the interlayer. Here we review progress in "quantum-material Josephson junctions" (QMJJ), focusing on three rapidly advancing barrier families: (1) magnetic barriers, where exchange, noncollinearity, and spin-active scattering enable 0-π-φ ground states, singlet-triplet conversion, and nonreciprocal transport; (2) correlated barriers, where proximity effects acquire many-body character and recent van der Waals Kagome Mott interlayers exhibit field-free Josephson diode behavior; and (3) ferroelectric and multiferroic barriers, where nonvolatile polarization provides an internal control knob and can produce superconducting memory and memristive dynamics.
More Related Videos
Related Concept Videos
P-N junction
Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Characteristics of JFET
The core of a JFET's operation is controlling drain current by modulating the gate-source voltage. When the drain and gate voltage are set to zero, the JFET exhibits no net current flow, representing a state of equilibrium. The drain current increases linearly as the...
Junction Potentials in Galvanic Cells

