A monolithic fabrication platform for intrinsically stretchable polymer transistors and complementary circuits

Stretchable organic field-effect transistors (OFETs) provide signal conditioning for bioelectronics while offering tunable mechanical and chemical properties, but their fabrication remains materialspecific and difficult to extend to complementary circuits, where sequentially patterning of multiplex semiconductors often degrades device performance. In this work, we introduce a monolithic photolithography process for intrinsically stretchable complementary OFETs and circuits, with high yield, high resolution, and material versatility. This platform combines a directly photopatternable, solvent-resistant crosslinked dielectric/semiconductor interface, crosslinked high-mobility polymer-semiconductor blends, and self-aligned encapsulation that also serves as an etch mask. It patterns multiple p- and n-type polymer semiconductors, achieving a record density of 55,000 OFETs per cm², 2 μm resolution, and 5 V operation voltages. We fabricated stretchable complementary inverters and 3.3 kHz ring oscillators, the first stretchable complementary OFET oscillators above 1 kHz and >60× faster than state-of-the-art processes, providing a scalable foundation for skin-like electronics.