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Comparative Performance Analysis of Planar MIM Diodes with Novel Electrode-Insulator Material Combinations for LWIR
Rocco Citroni1, Luca Balestreri1, Fabio Mangini2
1Department of Information Engineering, Electronics and Telecommunications (DIET), "La Sapienza" University of Rome, 00184 Rome, Italy.
Abstract:
Metal-Insulator-Metal (MIM) tunneling diodes are among the most promising rectifying devices for long-wave infrared (LWIR) rectenna systems due to their ultrafast response and zero-bias operation. However, their performance is strongly dependent on the choice of electrode and dielectric materials, making the identification of optimal material combinations a key challenge. To address this issue, this theoretical study presents a numerical investigation of a new class of MIM diodes based on a quantum-mechanical tunneling framework. Novel combinations of transition-metal dichalcogenides (NbS2, VSe2, and TaS2) as anode materials (M1), conductive carbides and nitrides (Mo2C, VN, and V) as cathode materials (M2), and rare-earth oxide and oxyhalide compounds (Sc2O3, LaOF, and LaOBr) as tunnel barriers (I) were selected through an extensive literature survey. These materials were combined to design previously unexplored MIM architectures for LWIR rectification. The electrical transport and rectification properties were evaluated using the Simmons tunneling model by calculating the current density-voltage (J-V) and current-voltage (I-V) characteristics, together with key figures of merit (FOMs), including zero-bias resistance, asymmetry factor, nonlinearity, and responsivity, at room temperature (300 K). The effects of tunnel barrier height and dielectric properties on device performance were systematically investigated. Among all the investigated architectures, the TaS2/LaOBr/V MIM diode exhibited the most promising overall performance, achieving an asymmetry factor exceeding 2.5 × 105, a nonlinearity factor of 1, and a zero-bias responsivity of 10 V-1 at 300 K. Furthermore, this structure demonstrated the highest current density and the most favorable I-V characteristics among the proposed material combinations. These results identify the TaS2/LaOBr/V material system as a promising candidate for high-performance LWIR energy harvesting applications, owing to its optimized tunnel barrier height, which promotes efficient electron tunneling while maintaining excellent rectification properties.