Gate-Tunable Remnant Anomalous Hall Effect in Dual-‍Proximity Graphene Heterostructures

Monolayer graphene offers long spin coherence but lacks the intrinsic spin-orbit coupling (SOC) and magnetic exchange required to access anomalous Hall and topological transport. Simultaneously proximitizing graphene with a ferromagnet and a spin-orbit-coupled semiconductor can, in principle, unlock responses inaccessible to either single-proximity system, but an experimental demonstration has been missing. Here, we report a gate-tunable, remnant anomalous Hall effect (AHE) in dual-proximity Cr₂Ge₂Te₆/graphene/WSe₂ van der Waals heterostructures. Near charge neutrality, the trilayer exhibits a hysteretic transverse resistance with a remnant offset of up to ΔR _xy  ≈ 250 Ω and a characteristic transport reversal field of ~20 mT, corresponding to an anomalous Hall conductivity of order e²/h that changes sign multiple times within a narrow energy window. The hysteresis vanishes above T ≈ 50 K, tracking the Curie temperature of Cr₂Ge₂Te₆, and is absent in Cr₂Ge₂Te₆/graphene bilayer controls. Scaling analysis of σ _{x y} ^AHE versus σ _{x x} rules out extrinsic skew-scattering and side-jump mechanisms near the Dirac point, while low-energy model calculations reproduce the observed sign structure through Berry-curvature hot spots that emerge only when exchange and SOC act together. Our results establish dual-proximity engineering as a route toward gate-tunable topological phases in graphene.