Self-powered ultraviolet-near-infrared dual-band photodetection enabled by a p-PbS-EDT/n-InGaN heterojunction

The ultraviolet (UV) and near-infrared (NIR) dual-band photodetectors are attractive for low-power multispectral sensing. However, conventional III-nitride-based dual-band detectors are either limited to UV-visible response or rely on external bias. Here, we report a self-powered UV-NIR dual-band photodetector based on a p-PbS-EDT/n-InGaN heterojunction. Driven by the intrinsic built-in electrical field, the device exhibits distinct zero-bias responsivities of 260.19 mA⋅W^-1 (385 nm) and 6.95 mA⋅W^-1 (940 nm), with corresponding specific detectivities of 6.38 × 10¹⁰ and 1.70 × 10⁹ Jones, respectively. Systematic electrical transport analysis reveals the response mechanisms of NIR and UV. This work establishes the non-epitaxial heterointegration as a route toward zero-power-consumption multispectral photodetectors for emerging applications.