Defect and Interface Engineering of VO₂ for Reconfigurable Nanophotonics

Vanadium dioxide (VO₂) is a prominent active material for reconfigurable nanophotonics because its reversible metal-insulator transition produces large changes in complex refractive index and electrical conductivity. The usable phase contrast, however, is not an intrinsic constant: it is governed by defect type and location, vanadium valence, oxygen stoichiometry, strain, crystallographic orientation, dimensionality, and the chemical, electrical, optical, and thermal boundary conditions imposed by interfaces. This focused narrative review develops a defect- and interface-centred framework linking VO₂ phase physics to device-level optical modulation. Bulk, surface, grain-boundary, and heterointerface defects are distinguished, together with their effects on carriers, V-V bonding, phase stability, optical loss, and cycling reliability. Epitaxial and polycrystalline films, ultrathin layers, and nanostructures are compared across the visible, near-infrared, mid-infrared, and terahertz ranges. Thermal, optical, electrical, electrostatic, electrochemical, ionic, strain, and ferroelectric activation pathways are then compared according to volatility, speed, retention, reversibility, and endurance. Representative free-space metasurfaces, guided-wave modulators, adaptive emitters, and photonic memories are benchmarked separately to avoid mixing incomparable performance definitions. The resulting analysis shows that optical modulation, insertion loss, thermal overhead, ambient stability, and endurance are coupled through the same defect and interface landscape. Progress, therefore, requires coordinated control of phase purity, local chemistry, interface energetics, thermal transport, and architecture-specific performance reporting.