Related Experiment Video
Updated: Sep 28, 2026

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
Published on: March 9, 2019
Integrative slow effects of memristors induce fast-slow coupled dynamics: a unified modeling framework with hardware
Zhijun Li1, Zhe Li1, Shaobo He1
1School of Automation and Electronic Information, Xiangtan University, Xiangtan, 411105 China.
Abstract:
Despite significant advances in memristive neuron modeling, the physical origin of slow-timescale dynamics and its causal role in governing fast-slow coupled firing behaviors remain insufficiently elucidated-particularly under non-autonomous conditions, where conventional models typically rely on artificially imposed timescale separations. To address this gap, we propose a unified fast-slow modeling framework that exploits the inherent integrative slow dynamics of memristors, rather than artificially assigned time constants, to naturally induce timescale coupling. This framework is instantiated by coupling a flux-controlled memristor as a slow subsystem into the fast Hindmarsh-Rose neuron, yielding a three-dimensional memristive HR (mHR) model in which the small parameter emerges directly from the memristor's physical integration property. Through time-varying equilibrium point analysis, we reveal that periodic bursting originates from reciprocal topological transitions between fold and Hopf bifurcation boundaries, and systematically characterize the modulation laws of external stimulus amplitude and memristive coupling strength via one-dimensional/two-dimensional bifurcation diagrams and Lyapunov exponent spectra. Furthermore, basin-of-attraction calculations confirm the coexistence of chaotic strange attractors and regular limit cycles under identical parameters. These theoretical findings are rigorously validated through both analog circuit simulations (PSpice) and digital hardware implementations on an STM32 platform, with experimental waveforms consistently reproducing the predicted bursting and spiking behaviors. This study establishes a physically grounded theoretical framework for fast-slow memristive neurons and provides a hardware-validated reference for memristor-based neuromorphic engineering applications.
Related Concept Videos
MOS Capacitor
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Current Growth And Decay In RL Circuits
Pharmacodynamic Models: Link Model and Systems Pharmacodynamic Model
Non-ohmic Devices
Consider a simple circuit consisting of a battery, a diode, and a resistor. A diode...
Simplified Synchronous Machine Model
In this model, each generator is connected to a...

