Redefining a Scalable β-Ga2O3/SiC Heterogeneous Material Platform via MOCVD-Assisted Ion-Cutting Technology

Heterointegration has emerged as a key developmental pathway for the continuous progress of microelectronics technology in the post-Moore era. However, there exists an urgent demand for practical and universally applicable approaches to realize high-quality heterogeneous integrated materials. In this study, MOCVD-assisted ion-cutting technology, which combines ion-cutting and homoepitaxy technology, is proposed for fabricating a β-Ga2O3-on-SiC heterointegrated material with excellent electrical and thermal transport performance. Benefiting from the excellent crystal quality, the β-Ga2O3 thin film exhibits a high effective Hall mobility of 31.9 cm2 V-1 s-1 at a relatively high apparent Hall carrier concentration of 3.6 × 1018 cm-3 and a thin film thermal conductivity of 13.0 +1.7/-1.8 W m-1 K-1. The atomically abrupt β-Ga2O3/SiC heterointerface constructed by hydrophilic bonding and stepwise annealing interface engineering yields an exceptional interfacial thermal conductance of 147 +23/-20 MW m-2 K-1, in which elastic phonon scattering with energies of 56 meV dominates the thermal transport. This proposed method offers a versatile and scalable solution for the development of next-generation semiconductor devices, showcasing enormous potential to revolutionize the microelectronics technology by enabling the fabrication of diverse heterointegrated materials with superior electrical and thermal characteristics.