Related Experiment Video

Updated: Oct 28, 2026

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
14:16

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

Enhanced Performance of In2O3/SnO2 Dual-Channel Thin-Film Transistor by Heterostructure Strategy

Pengbo Guo1,2, Wenwu Pan3, Kaijie Gu1

  • 1Henan Key Laboratory of Advanced Conductor Materials, Institute of Materials, Henan Academy of Sciences, Zhengzhou 450046, China.

Materials (Basel, Switzerland)
|October 27, 2026
PubMed

Keywords:
In2O3/SnO2dual-channelheterojunctionthin-film transistor

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