Related Experiment Video
Updated: Oct 28, 2026

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
Published on: August 2, 2019
A Low-Phase-Noise InGaAs/GaAs BiHEMT Balanced Colpitts VCO with Deep-Learning-Optimized On-Chip Inductor for
Maolin Zhou1, Xinlin Xia1, Haiyang Zhu1
1School of Microelectronics, South China University of Technology, Guangzhou 511442, China.
Abstract:
In this communication, a balanced Colpitts VCO with low phase noise and a wide tuning range is presented, which was implemented using a 2 μm GaAs BiHEMT process. To improve phase noise, a noise-shifting technique introduced by the cross-coupled pair was applied. A deep-learning-assisted genetic algorithm was employed to optimize the quality factor of an on-chip inductor, further improving the phase noise. Additionally, three-bit switches were utilized to expand the tuning range of this VCO. Finally, a VCO prototype was implemented and fabricated for verification. The measurement results demonstrate that the proposed VCO can achieve a wide tuning range of 33% (2.56-3.57 GHz) and an excellent phase noise of -136.25 dBc/Hz at a 1 MHz offset, validating the efficiency of the adopted circuit techniques and the machine learning-assisted optimization strategy for low-phase-noise design. Consequently, this VCO proves to be a highly competitive candidate for signal sources in S-band satellite communication systems.
Related Concept Videos
Cascaded Op Amps
In a cascaded system, each op-amp is referred to as a stage. The output of one stage drives the input of the subsequent stage. As the input signal passes through...
Biasing of FET
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the gate...
Inductors
Inductors
MOSFET Amplifiers
Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...

