Monolithic three-dimensionally integrated memristor-thin-film transistor for electrically programmable multimode reservoir computing
Related Experiment Video
Updated: Nov 3, 2026

A Method for Growing Bio-memristors from Slime Mold
Published on: November 2, 2017
Sung Keun Shim1, Wonho Choi1, Sunwoo Cheong1
1Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea.
Abstract:
Reservoir computing offers an efficient framework for processing temporal information, but most hardware reservoirs exhibit fixed or narrowly tunable dynamics determined by intrinsic material relaxation time. A monolithically integrated memristor-thin-film transistor reservoir kernel of this study enables electrically programmable temporal dynamics across a wide timescale. By vertically and monolithically integrating Ru/HfO2/TiN memristors with In2O3 channel thin-film transistors (TFTs), the memristive conductance dynamics are modulated by the TFTs. The temporal response can be actively tuned over three orders of magnitude experimentally and extended to over eight orders of magnitude via circuit configuration, demonstrating temporally unconstrained hardware with general applicability for spatiotemporal data processing. Implemented as an active reservoir array compatible with back-end-of-line integration, the system exhibits reliable spatiotemporal responses. The system demonstrates spatiotemporal computing capability through dynamic motion recognition in vision sensors and ultrasound signal classification, achieving high accuracy with a simple linear readout layer.
More Related Videos
Related Concept Videos
MOS Capacitor
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
MOSFET
In an n-MOSFET, the structure includes n-type source and drain...
Characteristics of MOSFET
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable quicker...
Field Effect Transistor
Non-ohmic Devices
Consider a simple circuit consisting of a battery, a diode, and a resistor. A diode...

